description the h11aax series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. ac input/phototransistor optocouplers h11aa1 h11aa3 h11aa2 h11aa4 applications ? ac line monitor unknown polarity dc sensor telephone line interface features bi-polar emitter input built-in reverse polarity input protection underwriters laboratory (ul) recognized ? file #e90700 vde approved ? file #e94766 (ordering option ?300?) 6 1 6 1 6 1 1 2 6 5coll 4 emitter base 3 schematic ? ? 2001 fairchild semiconductor corporation ds300212 12/12/01 1 of 7 www.fairchildsemi.com parameter symbol device value units total device t stg all -55 to +150 c storage temperature operating temperature t opr all -55 to +100 c lead solder temperature t sol all 260 for 10 sec c total device power dissipation p d all 350 mw derate linearly from 25 c 4.6 mw/ c emitter i f all 100 ma continuous forward current forward current - peak (1 ? pulse, 300 pps) i f (pk) all 1.0 a led power dissipation p d all 200 mw derate linearly from 25 c 2.6 mw/ c detector detector power dissipation p d all 300 mw derate above 25 c 4.0 mw/ c
parameter test conditions symbol device min typ max unit emitter input forward voltage i f = ?0 ma v f all 1.2 1.5 v capacitance v f = 0 v, f = 1.0 mhz c j all 80 pf detector breakdown voltage collector to emitter i c = 1.0 ma, i f = 0 bv ceo all 30 v collector to base i c = 100 a, i f = 0 bv cbo all 70 v emitter to base i e = 100 a, i f = 0 bv ebo all 5 v emitter to collector i e = 100 a, i f = 0 bv eco all 7 v leakage current collector to emitter v ce = 10 v, i f = 0 i ceo h11aa1,3,4 50 na h11aa2 200 capacitance collector to emitter v ce = 0, f = 1 mhz c ce all 10 pf collector to base v ce = 0, f = 1 mhz c cb all 80 pf emitter to base v ce = 0, f = 1 mhz c eb all 15 pf individual component characteristics electrical characteristics (t a = 25 c unless otherwise specified.) characteristic test conditions symbol min typ max units package capacitance input/output v i-o = 0, f = 1 mhz c i-o 0.7 pf isolation voltage f = 60 hz, t = 1 min. v iso 5300 v isolation resistance v i-o = 500 vdc r iso 10 11 ? isolation characteristics characteristics test conditions symbol device min typ max units h11aa4 100 current transfer ratio, i f = ?0 ma, v ce = 10 v ctr ce h11aa3 50 % collector to emitter h11aa1 20 h11aa2 10 current transfer ratio, symmetry i f = 10 ma, v ce = 10 v (figure.8) all .33 3.0 % saturation voltage i f = ?0 ma, i ce = 0.5 ma v ce(sat) all .40 v collector to emitter transfer characteristics (t a = 25 c unless otherwise specified.) www.fairchildsemi.com 2 of 7 12/12/01 ds300212 ac input/phototransistor optocouplers h11aa1 h11aa3 h11aa2 h11aa4
fig. 2 normalized ctr vs. forward current i f - forward current (ma) 0 5 10 15 20 n o r malize d c t r 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce = 5.0v t a = 25?c fig. 3 normalized ctr vs. ambient temperature - 75 -50 -25 0 25 50 75 100 125 n o r malize d c t r 0.4 0.6 0.8 1.0 1.2 1.4 1.6 normalized to i f = 10 ma t a = 25 ? c i f = 10 ma i f = 20 ma t a - ambient temperature ( ? c) i f = 5 ma normalized to i f = 10 ma fig. 5 ctr vs. rbe (saturated) r be - base resistance (k w) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 0.3 v i f = 5 ma i f = 10 ma i f = 20 ma fig. 4 ctr vs. rbe (unsaturated) r be - base resistance (k w) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i f = 20 ma i f = 10 ma i f = 5 ma v ce = 5.0 v fig. 6 collector-emitter saturation voltage vs collector current i c - collector current (ma) v ce (sat) - collector-emitter saturation voltage (v) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 i f = 2.5 ma t a = 25 ? c i f = 20 ma i f = 10 ma i f = 5 ma fig. 1 input voltage vs. input current v f - input voltage (v) -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 i f - input current (ma) -100 -80 -60 -40 -20 0 20 40 60 80 100 ds300212 12/12/01 3 of 7 www.fairchildsemi.com ac input/phototransistor optocouplers h11aa1 h11aa3 h11aa2 h11aa4
n o r m a l i z e d t o n - ( t o n ( r b e ) / t o n ( o p e n ) ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 fig. 8 normalized t on vs. r be r be - base resistance (k w) 10 100 1000 10000 100000 v cc = 10 v i c = 2 ma r l = 100 w fig. 7 switching speed vs. load resistor r-load resistor (k w) 0.1 1 10 100 swit c hi n g spe e d - ( s) 0.1 1 10 100 1000 t off i f = 10 ma v cc = 10 v t a = 25 ? c t r t on t f 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v cc = 10 v i c = 2 ma r l = 100 w n o r m a l i z e d t of f - ( t of f ( r b e ) / t of f ( o p e n ) ) fig. 9 normalized t off vs. r be r be - base resistance (k w) 10 100 1000 10000 100000 fig. 10 dark current vs. ambient temperature t a - ambient temperature ( ? c) 0 20406080 100 i ce o - co l l e c t o r - e m i t t e r d a r k cur r e n t ( n a ) 0.001 0.01 0.1 1 10 100 1000 10000 v ce = 10 v t a = 25 ? c v ce - collector to emitter voltage (v) .01 .05 .1 .5 5 1 10 n o r m a l i z e d o utp ut cur r e n t .01 .005 .05 .1 .5 1 5 10 fig. 11 output symmetry characteristics i f = i - 10ma i i f = i 10ma i normalized to: v ce = 10 v i f = 10 ma the maximum peak output current will be no more than three times the minimum peak output current at i f = 10 ma www.fairchildsemi.com 4 of 7 12/12/01 ds300212 ac input/phototransistor optocouplers h11aa1 h11aa3 h11aa2 h11aa4
lead coplanarity : 0.004 (0.10) max 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.300 (7.62) typ 0.405 (10.30) max 0.315 (8.00) min 0.016 (0.40) min 2 5 pin 1 id. 0.016 (0.41) 0.008 (0.20) 0.100 (2.54) typ 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.165 (4.18) 4 3 0.020 (0.51) min 1 6 0.100 (2.54) typ 0.020 (0.51) min 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) pin 1 id. 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.300 (7.62) typ 0 to 15 0.154 (3.90) 0.100 (2.54) seating plane 0.016 (0.40) 0.008 (0.20) seating plane 0.016 (0.40) 0.008 (0.20) 0.070 (1.78) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.154 (3.90) 0.100 (2.54) 0.200 (5.08) 0.135 (3.43) 0.004 (0.10) min 0.270 (6.86) 0.240 (6.10) 0.400 (10.16) typ 0 to 15 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) typ note all dimensions are in inches (millimeters) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54) package dimensions (surface mount) package dimensions (through hole) package dimensions (0.4?lead spacing) recommended pad layout for surface mount leadform ds300212 12/12/01 5 of 7 www.fairchildsemi.com ac input/phototransistor optocouplers h11aa1 h11aa3 h11aa2 h11aa4
s .s surface mount lead bend sd .sd surface mount; tape and reel w.w0.4 lead spacing 300 .300 vde 0884 300w .300w vde 0884, 0.4 lead spacing 3s .3s vde 0884, surface mount 3sd .3sd vde 0884, surface mount, tape and reel option order entry identifier description 4.0 0.1 1.55 0.05 user direction of feed 4.0 0.1 1.75 0.10 7.5 0.1 16.0 0.3 12.0 0.1 0.30 0.05 13.2 0.2 4.85 0.20 0.1 max 10.30 0.20 9.55 0.20 1.6 0.1 carrier tape specifications (?d? taping orientation) ordering information note all dimensions are millimeters www.fairchildsemi.com 6 of 7 12/12/01 ds300212 ac input/phototransistor optocouplers h11aa1 h11aa3 h11aa2 h11aa4
marking information re?w pro?e (black package, no suf?) h11aa1 v xx yy k 1 2 6 4 3 5 de?itions 1 fairchild logo 2 device number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 two digit year code, e.g., ?3 5 two digit work week ranging from ?1 to ?3 6 assembly package code peak reflow temperature: 225 c (package surface temperature) time of temperature higher than 183 c for 60 150 seconds one time soldering reflow is recommended 215 c, 10 30 s 225 c peak time (minute) 0 300 250 200 150 100 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 temperature ( c) time above 183 c, 60 150 sec ramp up = 3 c/sec
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i13 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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